bubble formation meaning in English
鼓泡
气泡形成
形成气泡
Examples
- The air - bubble formation in the hard anodic oxidation of aluminum alloy ( zl109 ) pistol was studied using a pulse / galvanostat electric power supply device
摘要对铝合金阳极氧化区气泡形成的机理、影响和防止措施进行了探讨。 - And also we study the bubble flow behavior of the bubbling fluidized bed . the single bubble and continuous bubble formation , rise , break and coalesce characteristics are studied separately and compared with the experimental data . it shows good consistency
随后研究了鼓泡床内的气泡运动变化规律，分别模拟了单个气泡和连续气泡的生成、生长、破裂以及合并等的行为特性并且和实验数据进行了对照，取得了较好的结果。 - Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time , and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev , 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours , are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed , which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox . sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si , and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect . behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation , 600 is appropriate for the post - implantation treatment
Sige - simox工艺方面：首次采用硅( 100 )衬底上直接外延的100nm厚sige的样品中注入高剂量的o离子，通过退火处理成功制备了sige - oi新结构，即sige - simox工艺，证实了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )剂量的氧离子，随后在氧化层的保护下经1250 ， ar + 5 o _ 2气氛的高温退火( 5小时)过程，可以制备出sige - oi新型材料；实验中观察到退火过程中的ge损失现象，分析了其原因是ge挥发( ge通过表面氧化层以geo挥发性物质的形式进入退火气氛)和ge扩散( ge穿过离子注入形成的氧化埋层而进入si衬底中) ，其中ge扩散是主要原因；根据实验结果及实验中出现的问题，对下一步工作提出两个改进的方案：一是通过在si衬底中注入适量h ~ + / he ~ +形成纳米孔层来阻断ge扩散通路，二是可以通过控制表面氧化来调节安止额士淤丈捞要表面sige层中的ge组分，从而部分解决sige